| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a III nitride semiconductor single crystal, which is low in dislocation and superior in crystallinity and can be used as a semiconductor substrate can be manufactured, and to provide the semiconductor substrate. SOLUTION: An AlN buffer layer 2 is formed on a (0001) sapphire substrate 1, and a GaN base layer 3 is formed on the layer 2. Then a recess 4, having a stepped bottom face, is formed by partially removing the base layer 3 by etching the layer 3 from its main surface. In addition, an AlN intermediate layer 5 is formed over the whole surface of the base layer 3, including the recess 4 and an AlGaN semiconductor layer 6, is formed on the intermediate layer 5, so as to fill the steps caused by the recess 4. |
