| 发明名称 | FinFET with multiple dislocation planes and method for forming the same | ||
| 摘要 | A device comprises a first semiconductor fin over a substrate, a second semiconductor fin over the substrate, wherein the first semiconductor fin and the second semiconductor fin are separated by a first isolation region, a first drain/source region coupled to the first semiconductor fin and the second semiconductor fin and a first dislocation plane underlying the first isolation region, wherein the first dislocation plane extends in a first direction in parallel with a longitudinal axis of the first semiconductor fin. | ||
| 申请公布号 | US9362278(B1) | 申请公布日期 | 2016.06.07 |
| 申请号 | US201414585110 | 申请日期 | 2014.12.29 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Huang Chih-Hsiang;Lin Da-Wen |
| 分类号 | H01L31/062;H01L27/088;H01L29/06;H01L29/78;H01L21/8234;H01L21/324;H01L21/265 | 主分类号 | H01L31/062 |
| 代理机构 | Slater Matsil, LLP | 代理人 | Slater Matsil, LLP |
| 主权项 | 1. A device comprising: a first semiconductor fin over a substrate; a second semiconductor fin over the substrate, wherein the first semiconductor fin and the second semiconductor fin are separated by a first isolation region; a first drain/source region coupled to the first semiconductor fin and the second semiconductor fin; and a first dislocation plane underlying the first isolation region, wherein the first dislocation plane extends in a first direction in parallel with a longitudinal axis of the first semiconductor fin. | ||
| 地址 | Hsin-Chu TW | ||