Method for deposition of conformal films with catalysis assisted low temperature CVD

摘要

A method for depositing a film in a substrate processing system includes arranging a substrate on a pedestal in a processing chamber, heating the substrate to a temperature within a predetermined temperature range, and supplying a gas mixture to the processing chamber for a predetermined period to deposit the film on the substrate, wherein the gas mixture includes a first precursor gas, ammonia gas and diborane gas.

主权项

1. A method for depositing a conformal film in a substrate processing system, comprising:
a) arranging a substrate on a pedestal in a processing chamber; b) heating the substrate to a temperature within a predetermined temperature range, wherein the predetermined temperature range is between 500° C. and 630° C.; and c) supplying a gas mixture to the processing chamber for a predetermined period to deposit the conformal film on the substrate, wherein the gas mixture includes a first precursor gas, ammonia gas and diborane gas, wherein the first precursor gas has a deposition temperature of approximately 650° C., wherein the gas mixture including the diborane gas has a deposition temperature within the predetermined temperature range, and wherein a ratio of the first precursor gas to the diborane gas is between 1:0.01 and 1:0.025.