发明名称 |
SEMICONDUCTOR LAMINATE, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD THEREOF |
摘要 |
Provided is a method for manufacturing a semiconductor device. Also provided are: a semiconductor device which can be obtained by the method; and a dispersion that can be used in the method. A method for manufacturing a semiconductor device (500a) of the present invention includes the steps (a)-(c) described below. (a) A dispersion which contains doped particles is applied to a specific part of a layer or a base. (b) An unsintered dopant implanted layer is obtained by drying the applied dispersion. (c) The specific part of the layer or the base is doped with a p-type or n-type dopant by irradiating the unsintered dopant implanted layer with light, and the unsintered dopant implanted layer is sintered, thereby obtaining a dopant implanted layer that is integrated with the layer or the base. |
申请公布号 |
US2016300717(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201615097672 |
申请日期 |
2016.04.13 |
申请人 |
TEIJIN LIMITED |
发明人 |
TOMIZAWA Yuka;IKEDA Yoshinori;Imamura Tetsuya |
分类号 |
H01L21/02;H01L31/18;H01L29/66;H01L31/068 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Osaka JP |