| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing method and apparatus can maintain a deposition rate in a stable manner. <P>SOLUTION: The plasma processing method is used for forming high aspect ratio vias by implementing an etching step and a protective film forming step alternatively in a repeated manner. Then, a sputtering method is applied to the formation step of the protective film. In the sputtering step, a high frequency power (RF1) is supplied to an antenna coil 23, and a sputtering gas plasma is formed inside a vacuum tub 21. At this point, the high frequency power supplied to the antenna coil 23 is set to be equal to or greater than 2 kW. When the high frequency power supplied to the antenna coil 23 is equal to or greater than 2 kW, it is possible to obtain a stable deposition rate without dependenting on the operating time of a target 30 in comparison with the case where the high frequency power is less than 2 kW. <P>COPYRIGHT: (C)2010,JPO&INPIT |
