SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A drift layer (20) is formed of a wide bandgap semiconductor. First well regions (30) are provided on the drift layer (20). Source regions (40) are provided on the first well regions (30), respectively. Gate insulating films (50) are provided on the first well regions (30). A first electrode (80) is in contact with the source regions (40), and has, among the first well regions (30), diode characteristics capable of performing unipolar conduction to the drift layer (20). A second well region (31) is provided on the drift layer (20). A second electrode (81) is in contact with the second well region (31), and is separated from a gate electrode (82) and the first electrode (80).