| 发明名称 | Etching method | ||
| 摘要 | An etching method for etching an object to be processed in a processing chamber including a first electrode and a second electrode disposed facing the first electrode and configured to receive the object to be processed thereon is provided that includes steps of intermittently supplying first high frequency power to either the first electrode or the second electrode while supplying second high frequency power lower than the first high frequency power to the second electrode, supplying a process gas containing hydrogen bromide HBr and oxygen O2 into the processing chamber, and etching a poly silicon film deposited on the object to be processed into a mask pattern of a silicon-containing oxide film patterned by a spacer double patterning method by plasma generated from the process gas. | ||
| 申请公布号 | US9530671(B2) | 申请公布日期 | 2016.12.27 |
| 申请号 | US201414779670 | 申请日期 | 2014.04.22 |
| 申请人 | TOKYO ELECTRON LIMITED | 发明人 | Nakahara Yoichi |
| 分类号 | H01L21/311;H01L21/3213;H01L21/033;H01J37/32;H01L21/3205 | 主分类号 | H01L21/311 |
| 代理机构 | Ipusa, PLLC | 代理人 | Ipusa, PLLC |
| 主权项 | 1. An etching method for etching an object to be processed in a processing chamber including a first electrode and a second electrode disposed facing the first electrode and configured to receive the object to be processed thereon, comprising steps of: intermittently supplying first high frequency power to either the first electrode or the second electrode while supplying second high frequency power lower than the first high frequency power to the second electrode; supplying a process gas containing hydrogen bromide HBr and oxygen O2 into the processing chamber; and etching a poly silicon film deposited on the object to be processed into a mask pattern of a silicon-containing oxide film patterned by a spacer double patterning method by plasma generated from the process gas, wherein the step of etching includes a main etching step of etching the poly silicon film into the mask pattern of the silicon-containing oxide film by the plasma generated from the process gas, andan over etching step of further etching the poly silicon film into the mask pattern of the silicon-containing oxide film after the main etching step,wherein the first high frequency power is intermittently supplied in the main etching step and the over etching step. | ||
| 地址 | Tokyo JP | ||