发明名称 Halbleitervorrichtung mit Abstrahlungsteil und Methode zur Herstellung desselben
摘要 A semiconductor device (10, 20) includes a stage (14a) having top and bottom surfaces, a semiconductor element (13) which is mounted on the top surface of the stage, a package part (11) which is made of a first resin and encapsulates the semiconductor element so that a surface (11a) of the package part (11) and the bottom surface (14a-1) of the stage (14a) lie on substantially the same plane, and a radiation part (12, 21) which is made of a second resin and is provided directly on the bottom surface (14a-1) of the stage (14a) and the surface (11a) of the package part (11). The second resin includes a filler material selected from a group consisting of metal powders and insulator powders so that a thermal conduction of the second resin is greater than that of the first resin. <IMAGE>
申请公布号 DE69222340(T2) 申请公布日期 1998.01.29
申请号 DE1992622340T 申请日期 1992.03.16
申请人 FUJITSU LTD., KAWASAKI, KANAGAWA, JP 发明人 SONO, MICHIO, C/O FUJITSU LIMITED, KAWASAKI-SHI, KANAGAWA, 211, JP;KASAI, JUNICHI, C/O FUJITSU LIMITED, KAWASAKI-SHI, KANAGAWA, 211, JP
分类号 H01L23/36;H01L21/56;H01L23/31;H01L23/373 主分类号 H01L23/36
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