发明名称 |
Method for etching a semiconductor method for fabricating semiconductor device method for fabricating semiconductor laser and semiconductor laser |
摘要 |
A method of etching a III-V compound semiconductor uses an etching gas including the group V element of the III-V compound semiconductor substrate layer while keeping the III-V compound semiconductor layer at a temperature higher than the crystal growth temperature of the III-V compound semiconductor. Etching using this method provides a higher degree of controllability than wet etching. In addition, because no etching solution is employed, the etching method can be employed in a crystal growth apparatus. Further, because an element of the III-V compound semiconductor layer is employed in the etching gas, incorporation of residual impurities can be prevented, keeping the etched surface clean.
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申请公布号 |
US5872022(A) |
申请公布日期 |
1999.02.16 |
申请号 |
US19950522933 |
申请日期 |
1995.09.01 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MOTODA, TAKASHI;KATO, MANABU;TAKEMI, MASAYOSHI |
分类号 |
H01L21/302;H01L21/20;H01L21/306;H01S3/094;H01S5/00;H01S5/026;H01S5/12;H01S5/20;H01S5/223;H01S5/227;H01S5/343;H01S5/40;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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