Light Emitting Diode Structure

摘要

A light emitting diode structure includes a first type semiconductor layer, a second type semiconductor layer, an active layer disposed therebetween, and a reflective stacked layer. The reflective stacked layer includes a first reflective layer and a second reflective layer. The first reflective layer is disposed at a side of the second type semiconductor layer opposing the active layer. The second reflective layer is disposed at a side of the first reflective layer opposing the second type semiconductor layer, and extends along a side surface of the first reflective layer to a surface of the second type semiconductor layer. A vertical projection area of the second reflective layer on the second-type semiconductor layer is greater than that of the first reflective layer thereon. The second reflective layer has a better resistance to migration than the first reflective layer.

主权项

1. A light emitting diode structure, comprising:
a first type semiconductor layer; an active layer; a second type semiconductor layer, wherein the active layer is disposed between the first type semiconductor layer and the second type semiconductor layer; and a reflective stacked layer, comprising:
a first reflective layer disposed at a side of the second type semiconductor layer opposing the active layer; anda second reflective layer which is disposed at a side of the first reflective layer opposing the second type semiconductor layer, and extends along a side surface of the first reflective layer to a surface of the second type semiconductor layer,wherein the first reflective layer has a first surface proximate to the second type semiconductor layer, and the second reflective layer has a second surface proximate to the second type semiconductor layer, and a vertical projection area of the second reflective layer on the second type semiconductor layer is greater than a vertical projection area of the first reflective layer on the second type semiconductor layer, and the second reflective layer has a better resistance to migration than the first reflective layer.