METHOD OF SEPARATING LIGHT EMITTING DEVICES FORMED ON A SUBSTRATE WAFER

摘要

A method according to embodiments of the invention includes growing on a first surface of a sapphire substrate a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure is formed into a plurality of LEDs. Cracks are formed in the sapphire substrate. The cracks extend from the first surface of the sapphire substrate and do not penetrate an entire thickness of the sapphire substrate. After forming cracks in the sapphire substrate, the sapphire substrate is thinned from a second surface of the sapphire substrate. The second surface is opposite the first surface.

主权项

1. A method comprising
growing a light emitting semiconductor structure on a substrate, the substrate comprising a front side and a back side opposite the front side, wherein the light emitting semiconductor structure is grown on the front side; after growing the light emitting semiconductor structure on the substrate, forming notches in the substrate, wherein the notches extend from the front side of the substrate into the substrate; and after forming the notches in the substrate, processing the light emitting semiconductor structure into LEDs; after forming notches in the substrate, thinning the back side of the substrate to expose the notches.