发明名称 |
CRYSTAL LAMINATE STRUCTURE |
摘要 |
PROBLEM TO BE SOLVED: To provide a crystal laminate structure having a β-GaO-based single crystal film containing in the whole crystal, a dopant whose concentration can be set in a wide range.SOLUTION: There is provided a crystal laminate structure 1 containing as one embodiment: a GaO-based substrate 10; and a β-GaO-based single crystal film 12 containing Cl and a dopant having a concentration of 1×10atoms/cmor higher and 5.0×10atoms/cmor lower and doped concurrently with crystal growth, and formed by epitaxial crystal growth on the principal surface 11 of the GaO-based substrate 10.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016175807(A) |
申请公布日期 |
2016.10.06 |
申请号 |
JP20150058518 |
申请日期 |
2015.03.20 |
申请人 |
TAMURA SEISAKUSHO CO LTD;TOKYO UNIV OF AGRICULTURE & TECHNOLOGY |
发明人 |
GOTO TAKESHI;KOKETSU AKINORI;KUMAGAI YOSHINAO;MURAKAMI TAKASHI |
分类号 |
C30B29/16;C23C16/40;C30B25/20;H01L21/205 |
主分类号 |
C30B29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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