发明名称 SEMICONDUCTOR DEVICE WITH PIEZOELECTRIC RESISTANCE-PRESSURE SENSOR
摘要 PURPOSE: To optimally reproduce a linear transfer function of a piezoresistance pressure sensor by introducing a conductive intermediate layer having an annular structure to determine an area of an opening part adjacent to an inside surface of the skin between a semiconductor base board and an epitaxial layer. CONSTITUTION: A part of an epitaxial layer 16 to form a coating film 14 is clearly set by an intermediate layer 28 having an annular structure incorporated between a semiconductor base board 18 and the epitaxial layer 16. Since this intermediate layer 28 has electric conductivity opposite to electric conductivity of the semiconductor base board 18, this intermediate layer 28 can function as an etch stopper to electrochemical anisotropic semiconductor etching, and as a result, deviation in positioning of a reverse side mask from a desired position and any change in a thickness of the base board 18 do not exert any influence on a critical opening part 26' to set restriction of the coating film 14.
申请公布号 JPH07128169(A) 申请公布日期 1995.05.19
申请号 JP19940089085 申请日期 1994.03.22
申请人 TEXAS INSTR DEUTSCHLAND GMBH 发明人 JIIKUBERUTO HARUTAUAA
分类号 G01L9/04;G01L9/00;H01L29/84;(IPC1-7):G01L9/04 主分类号 G01L9/04
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