| 发明名称 |
Semiconductor device provided with boost circuit consuming less current |
| 摘要 |
A boosting portion switches between an N channel MOS transistor with high drivability and a P channel MOS transistor with low drivability for transmitting a high potential at an internal node to an output node. The N and P channel MOS transistors are respectively operated when boosted potential Vpp is low and high.
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| 申请公布号 |
US2002000822(A1) |
申请公布日期 |
2002.01.03 |
| 申请号 |
US20010754122 |
申请日期 |
2001.01.05 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TOMISHIMA SHIGEKI |
| 分类号 |
G11C11/407;G11C5/14;G11C8/08;G11C11/4074;G11C11/408;(IPC1-7):G01R31/02 |
主分类号 |
G11C11/407 |
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