,申请号JP19940501111-传众专利搜索

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法人/股东/高管

发明名称
摘要	A method of fabricating CMOS devices with local interconnects is disclosed which is performed in two stages. In the first stage, a SALICIDE process is carried out, and in the second stage, the local interconnects are formed.
申请公布号	JP3249524(B2)	申请公布日期	2002.01.21
申请号	JP19940501111	申请日期	1993.06.09
申请人		发明人
分类号	H01L21/768;H01L21/8238;H01L27/092;H01L29/78;(IPC1-7):H01L29/78;H01L21/823	主分类号	H01L21/768
代理机构		代理人
主权项
地址

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