| 摘要 |
The semiconductor body (100,110) has two connection zones (120,121,130) of first conductivity, between which, in front side region, is formed channel zone (140,141) of conductivity complementary to first conductivity. A gate electrode (170), insulated from semiconductor body, is formed on body front side and adjacent to channel zone.The gate electrode is formed after forming channel zone in region of front side of semiconductor body. In first connection zone (120,121), in region of front side of semiconductor (110), is formed heavily doped contact zone. |
