发明名称 Semiconductor structure integrated under a pad
摘要 An integrated semiconductor structure has a substrate, a semiconductor element located on the substrate, a pad metal, metal layers located between the pad metal and the substrate, and insulation layers that separate the metal layers from one another. The pad metal extends over at least-part of the semiconductor element. Below the surface of the pad metal, at least the top two metal layers include two or more adjacent interconnects.
申请公布号 US7190077(B2) 申请公布日期 2007.03.13
申请号 US20040519860 申请日期 2004.12.29
申请人 INFINEON TECHNOLOGIES AG 发明人 BAUER ROBERT;ERTLE WERNER;FROHNMUELLER TILL;GOLLER BERND;GREIDERER REINHARD;NAGLER OLIVER;SCHMECKEBIER OLAF;STADLER WOLFGANG
分类号 H01L23/48;H01L23/485;H01L23/52;H01L29/40 主分类号 H01L23/48
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