FBAR DEVICE AND FABRICATING METHOD THEREOF, IN WHICH BOTTOM ELECTRODE AND THE PIEZOELECTRIC LAYER IS FORMED ON AN ETCH STOP LAYER

摘要

PURPOSE: A FBAR(Film Bulk Acoustic wave Resonator) device and a fabricating method thereof are provided to improve c-axis orientation and a resonant characteristic of a piezoelectric layer by forming a thin bottom electrode and the piezoelectric layer on an etch stop layer. CONSTITUTION: An etch stop layer(10) corresponding to an edge of an acoustic reflection layer is fabricated by depositing an oxide of predetermined thickness or a nitride of predetermined thickness on a substrate. A bottom electrode(20) is formed by depositing conductive materials on the etch stop layer. A piezoelectric layer(30) is formed by depositing piezoelectric materials on a part of the bottom electrode and a part of the etch stop layer. A top electrode(40) is formed by depositing conductive materials on a part of the piezoelectric layer and a part of the etch stop layer.