| 摘要 |
SOLUTION: A pattern forming method is provided, which includes: applying a resist composition that comprises a polymer compound having a repeating unit including an acid labile group-substituted carboxyl group, an acid generator, and an organic solvent, on a substrate to form a resist film; heat treating the resist film and then exposing the resist film to high energy beams; heat treating the resist film and then forming a negative pattern by use of an organic solvent developer; applying a shrink agent solution that comprises a polymer compound having a repeating unit including an acid labile group-substituted hydroxy group and/or carboxyl group, an ester solvent having 7 to 16 carbon atoms and/or a ketone solvent having 8 to 16 carbon atoms, on the negative pattern; and baking the pattern and then removing the excessive shrink agent by use of the organic solvent developer so as to shrink the size of a space in the pattern.EFFECT: The size of a space in a resist pattern can be shrunk in a precisely size-controlled manner.SELECTED DRAWING: None |
