发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device and a method of making the same. The semiconductor device includes a semiconductor substrate mounted on a carrier. The semiconductor substrate includes a Schottky diode. The Schottky diode has an anode and a cathode. The semiconductor device also includes one or more bond wires connecting the cathode to a first electrically conductive portion of the carrier. The semiconductor device further includes one or more bond wires connecting the anode to a second electrically conductive portion of the carrier. The first electrically conductive portion of the carrier is electrically isolated from the second electrically conductive portion of the carrier. The first electrically conductive portion of the carrier is configured to provide shielding against electromagnetic interference associated with switching of the anode during operation of the device. Both the cathode and the first electrically conductive portion of the carrier are electrically isolated from a backside of the semiconductor substrate.
申请公布号 US2016163653(A1) 申请公布日期 2016.06.09
申请号 US201514874189 申请日期 2015.10.02
申请人 NXP B.V. 发明人 Croon Jeroen Antoon;Tak Coenraad Cornelis
分类号 H01L23/552;H01L21/48;H01L29/872;H01L23/498;H01L29/205 主分类号 H01L23/552
代理机构 代理人
主权项 1. A semiconductor device comprising: a semiconductor substrate mounted on a carrier, the semiconductor substrate including a Schottky diode, the Schottky diode having an anode and a cathode; one or more bond wires connecting the cathode to a first electrically conductive portion of the carrier; and one or more bond wires connecting the anode to a second electrically conductive portion of the carrier, wherein the first electrically conductive portion of the carrier is electrically isolated from the second electrically conductive portion of the carrier, wherein the first electrically conductive portion of the carrier is configured to provide shielding against electromagnetic interference associated with switching of the anode during operation of the device, and wherein both the cathode and the first electrically conductive portion of the carrier are electrically isolated from a backside of the semiconductor substrate.
地址 Eindhoven NL