SUB-FIN DEVICE ISOLATION

摘要

A fin-based structure may include fins on a surface of a semiconductor substrate. Each of the fins may include a doped portion proximate to the surface of the semiconductor substrate. The fin-based structure may also include an isolation layer disposed between the fins and on the surface of the semiconductor substrate. The fin-based structure may also include a recessed isolation liner on sidewalls of the doped portion of the fins. An unlined doped portion of the fins may extend from the recessed isolation liner to an active potion of the fins at a surface of the isolation layer. The isolation layer is disposed on the unlined doped portion of the fins.