发明名称 |
Method to fill deep trench structures with void-free polysilicon or silicon |
摘要 |
The present invention provides methods of producing trench structures having substantially void-free filler material therein. The fillers may be grown from a liner material such as polysilicon formed along the sidewalls of the trench. Previously formed voids may be healed by exposing the voids and growing epitaxial silicon.
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申请公布号 |
US6809005(B2) |
申请公布日期 |
2004.10.26 |
申请号 |
US20030386880 |
申请日期 |
2003.03.12 |
申请人 |
INFINEON TECHNOLOGIES AG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
RANADE RAJIV;MATHAD GANGADHARA S.;CHAN KEVIN K.;KULKARNI SUBHASH B. |
分类号 |
H01L21/205;H01L21/334;H01L21/763;H01L21/8242;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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