发明名称 |
Shallow junction semiconductor and method for the fabrication thereof |
摘要 |
A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. A super-saturated doped source silicide metallic layer is formed on the semiconductor substrate adjacent the gate and the gate dielectric. The silicide metallic layer incorporates a substantially uniformly distributed dopant therein in a substantially uniform super-saturated concentration. The silicide metallic layer is reacted with the semiconductor substrate therebeneath to form a salicide layer and outdiffuse the dopant from the salicide layer into the semiconductor substrate therebeneath. The outdiffused dopant in the semiconductor substrate is then activated to form a shallow source/drain junction beneath the salicide layer. An interlayer dielectric is then deposited above the semiconductor substrate, and contacts are formed in the interlayer dielectric to the salicide layer.
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申请公布号 |
US7033916(B1) |
申请公布日期 |
2006.04.25 |
申请号 |
US20040770990 |
申请日期 |
2004.02.02 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PELELLA MARIO M.;EN WILLIAM GEORGE;PATON ERIC;MASZARA WITOLD P. |
分类号 |
H01L21/22;H01L21/336;H01L21/44;H01L21/8234 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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