| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that includes a field effect transistor, capable of attaining a high Ion/Ioff ratio by optimizing the structure of the source/drain region. SOLUTION: In the semiconductor device that includes a field effect transistor, a first gate electrode 107 and a second gate electrode 108 are formed via a first gate insulating film 103 and a second gate insulating film 104, facing on both sides of a channel region 101, respectively. The source region 111 and the drain region 121 are formed on opposite sides of the first gate electrode 107 and the second gate electrode 108, sandwiching the channel region 101 therebetween. The thickness of the source region 111 (TSis) perpendicular to the interface between the first gate insulating film 103 and the channel region 104 is larger than the thickness of the channel region 101 (TSic) in the same direction. Furthermore, the source region 111 and the first and second gate electrodes 107, 108 are separated in the gate lengthwise direction. COPYRIGHT: (C)2008,JPO&INPIT
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