SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, AND MAGNETIC MEMORY ELEMENT

摘要

A semiconductor device comprises a standard MRAM having a magnetic tunnel junction TMR including a free layer MF whose magnetization direction is controlled by the magnetic field generated by the current flowing near the TMR and an STT-MRAM having a TMR including a free layer MF whose magnetization direction is controlled by the spin injection current supplied to the TMR. The standard MRAM and the STT-MRAM are mounted on the same substrate. With this constitution, the individual characteristics of different types of magnetic memory elements are effectively utilized, and magnetic memory elements having various element characteristics are realized.