| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including MIS transistors improved in both channel mobility and reliability while having leakage currents suppressed. Ž<P>SOLUTION: Provided is the semiconductor device includes a first well region 3a, a second well region 3b, a first active region 21a surrounded by an element separation region 2, a second active region 21b surrounded by element separation regions 2, 2B, a first MIS transistor MP2 having a second conductivity type which is formed on the first active region 21a and has the source/drain regions composed of silicon (Si) mixed crystal layer embedded in concave sections, a second MIS transistor MN2 having a first conductivity type formed on the second active region 21b, and an MIS transistor DP2 for separation having the second conductivity type formed on the first active region 21a. The source/drain regions of the first MIS transistor are not in contact with the element separation region 2 positioned at the edge in the lengthwise direction of the gate in the first active region 21a. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
