Semiconductor process

摘要

A semiconductor process is described. A semiconductor substrate having a memory area, a first device area and a second device area is provided. A patterned charge-trapping layer is formed on the substrate, covering the memory area and the second device area but exposing the first device area. A first gate oxide layer is formed in the first device area. The charge-trapping layer in the second device area is removed. A second gate oxide layer is formed in the second device area.

主权项

1. A semiconductor process, comprises:
providing a semiconductor substrate having a memory area, a first device area and a second device area; forming, over the semiconductor substrate, a patterned charge-trapping layer that covers the memory area and the second device area but exposes the first device area; forming a first gate oxide layer in the first device area; forming a first well in the semiconductor substrate in the second device area through the patterned charge-trapping layer in the second device area after the first gate oxide layer is formed; removing the charge-trapping layer in the second device area after the first well is formed; and forming a second gate oxide layer in the second device area.