Chemical vapor deposition apparatus

摘要

A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers.

主权项

1. A chemical vapor deposition apparatus comprising:
a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers such that the plurality of wafers are spaced apart from each other in a vertical direction in the reaction space; and a gas supplying part disposed in the reaction chamber to supply one or more reaction gases to the plurality of wafers, the gas supplying part comprising:
a plurality of gas pipes disposed in the reaction chamber to supply the one or more reaction gases from outside to the reaction space;a plurality of supplying pipes disposed around the wafer boat, wherein the plurality of supplying pipes are arranged spaced apart from each other in the vertical direction such that each of the supplying pipes is disposed around a corresponding one of the wafers and is connected to one or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the one or more reaction gases supplied by the one or more corresponding gas pipes to the corresponding one of the wafers; wherein the reaction chamber includes a plurality of spraying holes formed in an upper surface thereof to supply ambient gas from outside into the reaction space; and wherein the reaction chamber further includes a gate part formed on the upper surface of the reaction chamber to open or close the plurality of spraying holes to adjust a flux of the ambient gas supplied through the plurality of spraying holes.