| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device includes a first nitride semiconductor layer formed above a substrate, a second nitride semiconductor layer formed over the first nitride semiconductor layer and having a band gap larger than that of the first nitride semiconductor layer, a trench passing through the second nitride semiconductor layer and into the first nitride semiconductor layer, a gate insulation film formed in the trench, and a gate electrode disposed by way of the gate insulation film in an inside of the trench. The corner of the trench between a side wall of the trench and a bottom of the trench includes a rounded shape, and a corner of the gate insulation film in contact with the corner of the trench includes a rounded shape. |
| 申请公布号 |
US2016240648(A1) |
申请公布日期 |
2016.08.18 |
| 申请号 |
US201615142601 |
申请日期 |
2016.04.29 |
| 申请人 |
Renesas Electronics Corporation |
发明人 |
OKAMOTO Yasuhiro;NAKAYAMA Tatsuo;INOUE Takashi |
| 分类号 |
H01L29/778;H01L29/66;H01L29/423;H01L21/28;H01L29/20;H01L29/205 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first nitride semiconductor layer formed above a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer and having a band gap larger than that of the first nitride semiconductor layer; a trench passing through the second nitride semiconductor layer and into the first nitride semiconductor layer; a gate insulation film formed in the trench; and a gate electrode disposed by way of the gate insulation film in an inside of the trench, wherein a corner of the trench between a side wall of the trench and a bottom of the trench comprises a rounded shape, and a corner of the gate insulation film in contact with the corner of the trench comprises a rounded shape. |
| 地址 |
Tokyo JP |
