SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device may include a device isolation region configured to define an active region in a substrate, an active gate structure disposed in the active region, and a field gate structure disposed in the device isolation region. The field gate structure may include a gate conductive layer. The active gate structure may include an upper active gate structure including a gate conductive layer and a lower active gate structure formed under the upper active gate structure and vertically spaced apart from the upper active gate structure. The lower active gate structure may include a gate conductive layer. A top surface of the gate conductive layer of the field gate structure is located at a lower level than a bottom surface of the gate conductive layer of the upper active gate structure.

主权项

1. A semiconductor device comprising:
a device isolation region defining an active region in a substrate; an active gate structure in the active region; and a field gate structure in the device isolation region, the field gate structure including a gate conductive layer, wherein the active gate structure comprises:
an upper active gate structure including a gate conductive layer; anda lower active gate structure formed under the upper active gate structure and vertically spaced apart from the upper active gate structure, and including a gate conductive layer,wherein a channel area is formed between the upper active gate structure and the lower active gate structure, andwherein a top surface of the gate conductive layer of the field gate structure is lower than a bottom surface of the gate conductive layer of the upper active gate structure.