SOLID-STATE IMAGING DEVICE AND METHOD OF DRIVING SOLID-STATE IMAGING DEVICE

摘要

A solid-state imaging device includes a pixel including a photoelectric conversion element, an accumulation unit accumulating charges generated by the photoelectric conversion element, a reset unit resetting the accumulation unit at a voltage of equal to or more than 4.05 V, and an amplifier transistor amplifying and outputting a signal corresponding to amount of accumulated charges, a vertical output line connected to the pixel, a current source circuit including first to third transistors flowing a constant current through the vertical output line, and a voltage setting circuit respectively setting the gate voltages of the first to third transistors to a first voltage, a second voltage higher than the first voltage, and a third voltage higher than the second voltage and lower than the power supply voltage so as to set the drain-source voltage of each of the first to third transistors to equal to or less than 1.75 V.

主权项

1. A solid-state imaging device comprising:
a pixel including
a photoelectric conversion element,an accumulation unit to which charges generated by the photoelectric conversion element are transferred,a reset unit configured to reset the accumulation unit at a power supply voltage of equal to or more than 4.05 V, andan amplifier transistor configured to amplify and output a signal corresponding to amount of charges accumulated in the accumulation unit; a vertical output line which is connected to the pixel and to which the signal amplified by the amplifier transistor is output; a current source circuit including a third transistor connected to the vertical output line, a second transistor connected in series with the third transistor, and a first transistor connected in series with the second transistor and configured to make a predetermined constant current flow through the vertical output line; and a voltage setting circuit configured to set a gate voltage of the first transistor to a first voltage, a gate voltage of the second transistor to a second voltage higher than the first voltage, and a gate voltage of the third transistor to a third voltage higher than the second voltage and lower than the power supply voltage so as to set a drain-source voltage of each of the first transistor, the second transistor, and the third transistor to equal to or less than 1.75 V.