| 摘要 |
PURPOSE: To precisely limit a protection region in such a manner that a metallic thin film around the protection region of a spot made of a photosensitive resin is etched, thereby fluidizing the photosensitive resin until the resin comes into contact with a semiconductor substrate, and the semiconductor substrate is etched at the entire periphery and for a short time comes into contact with the steam of a solvent, thereby fluidizing the photosensitive resin. CONSTITUTION: Metallic thin films 3 and 4 are deposited on a semiconductor substrate 1, and a spot 2 made of a photosensitive resin is deposited on a region to be protected in the metallic thin films 3 and 4. The metallic thin films 3 and 4 around a region which is protected by the spot 2 made of the photosensitive resin are etched, and the photosensitive resin is fluidized around the region to be protected so as to come into contact with the semiconductor substrate 1. The semiconductor substrate 1 is etched for the entire periphery 5 of the region to be protected by the spot 2, made of the photosensitive resin and is allowed to come into contact with the steam of a solvent of a photosensitive region for a short time, to thereby fluidize the photosensitive resin. Thus, the solvent can be manipulated at a high speed, without deteriorating the photosensitive property of the photosensitive resin.
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