发明名称 |
Improvements relating to silicide formation |
摘要 |
<p>A silicide process using a pre-anneal amorphization implant prior to silicide anneal. A layer of titanium is deposited and reacted to form titanium silicide (32) and titanium nitride. The titanium nitride is removed and a pre-anneal amorphization implant is performed to enable increased transformation of the silicide (32) from a higher resistivity phase to a lower resistivity phase. A heavy dopant species (40) is used for the pre-anneal amorphization implant such as arsenic, antimony, or germanium. After the implant, the silicide anneal is performed to accomplish the transformation. An advantage of the invention is providing a silicide process having reduced silicide sheet resistance for narrow polysilicon lines. <IMAGE></p> |
申请公布号 |
EP0746012(A2) |
申请公布日期 |
1996.12.04 |
申请号 |
EP19960108737 |
申请日期 |
1996.05.31 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
PARANJPE, AJIT PRAMOD;APTE, PUSHKAR PRABHAKAR;MOSLEHI, MEHRDAD M. |
分类号 |
H01L21/28;H01L21/265;H01L21/285;H01L21/336;H01L29/78;(IPC1-7):H01L21/283;H01L23/532;H01L21/320 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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