Voltage-clamped power accumulation-mode MOSFET

摘要

An accumulation-mode power MOSFET includes a trenched gate that formed in a semiconductor material of a first conductivity type. A region of second conductivity type is formed in the substrate (which may include an epitaxial layer) and a PN junction formed by the region of second conductivity type is connected in parallel with the current path through the accumulation-mode MOSFET. The diode is designed to have a breakdown voltage was causes the diode to break down before the oxide layer surrounding the gate can be ruptured or otherwise damaged when the MOSFET is in an off condition.