Semiconductor stress sensor

摘要

A semiconductor substrate has a surface layer (SL) disposed underneath a gate electrode (G) of a field-effect transistor and having a resistance higher than the resistance of an inner layer (BL) which is formed in the semiconductor substrate below the surface layer (SL). The surface layer (SL) is formed when a donor doped in the surface layer (SL) and an acceptor generated based on a compressive stress which is developed in the surface layer (SL) when the gate electrode (6) is formed substantially cancel out each other. The field-effect transistor operates alternatively as a junction field-effect transistor when the surface layer (SL) is turned into a p-type structure when a compressive stress is generated in the surface layer (SL) and a metal semiconductor field-effect transistor when the surface layer (SL) is turned into an n-type structure when a tensile stress is generated in the surface layer (SL).