发明名称 |
Method of measuring a semiconductor device and a method of making a semiconductor device |
摘要 |
A method of measuring a semiconductor device in forming a capacitor by successively laminating a dielectric film and an opposed electrode above an upper face of a charge storing electrode a surface of which is formed in an irregular shaper, including the steps of forming the irregular shape of the charge storing electrode and measuring an area of the charge storing electrode which is to constitute an effective area of the capacitor by an atomic force microscope.
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申请公布号 |
US5846870(A) |
申请公布日期 |
1998.12.08 |
申请号 |
US19970862646 |
申请日期 |
1997.05.23 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
ISHIDA, TOMOAKI;OBARA, RYO |
分类号 |
G01B21/28;G01B21/30;G01N37/00;G01Q60/24;H01L21/02;H01L21/66;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;(IPC1-7):H01L21/20 |
主分类号 |
G01B21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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