| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting element manufacturing method which makes it possible to form a protection layer composed of a group III nitride semiconductor having small In composition ratio even when a growth temperature is low; and provide a group III nitride semiconductor manufacturing method.SOLUTION: A light emitting device manufacturing method comprises the steps of: forming on a well layer, a first protection layer composed of InGaN at a temperature equivalent with that of the well layer in a MOCVD method. In this case, TMI is supplied by pulses. A supply amount of TMI is a predetermined amount of larger than 0 and not more than 2 μmol/min and maintained at a constant amount. And a duty ratio D is a predetermined value of larger than 0 and not more than 0.95 and maintained at a constant value. An In composition of the first protection layer can be easily and controlled with high accuracy by controlling the duty ratio because the In composition is almost directly proportional to the duty ratio. Accordingly, by controlling the duty ratio, the first protection layer is formed to have the In composition within a range of more than 0% and not more than 3%.SELECTED DRAWING: Figure 5 |
