发明名称 DISPLAY APPARATUS HAVING A STEPPED PART
摘要 Provided is a display apparatus including a substrate and a semiconductor layer including first and second semiconductor layers. A first gate insulating layer is formed on the semiconductor layer. A first gate wiring overlapping the first semiconductor layer is formed on the first gate insulating layer. A second gate insulating layer is formed on the first gate wiring. A second gate wiring overlapping the second semiconductor layer is formed on the second gate insulating layer. A third gate insulating layer covers the second gate wiring. A driving voltage line intersecting the first and second gate wirings is formed on the third gate insulating layer. A data line intersecting the first and second gate wirings is formed on the third gate insulating layer. A short circuit protection area is formed between the first gate wiring, the second gate wiring, the driving voltage line and the data line.
申请公布号 US2016322402(A1) 申请公布日期 2016.11.03
申请号 US201615091624 申请日期 2016.04.06
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 KIM HYO JIN;LEE WON KYU;TAE SEUNG GYU
分类号 H01L27/12 主分类号 H01L27/12
代理机构 代理人
主权项 1. A display apparatus, comprising: a substrate; a semiconductor layer formed on the substrate, wherein the semiconductor layer includes a first semiconductor layer and a second semiconductor layer spaced apart from the first semiconductor layer; a first gate insulating layer formed on the semiconductor layer; a first gate wiring formed on the first gate insulating layer, wherein the first gate wiring overlaps the first semiconductor layer; a second gate insulating layer formed on the first gate wiring; a second gate wiring formed on the second gate insulating layer, wherein the second gate wiring overlaps the second semiconductor layer; a third gate insulating layer covering the second gate wiring; a driving voltage line formed on the third gate insulating layer, wherein the driving voltage line intersects the first gate wiring and the second gate wiring; a data line formed on the third gate insulating layer, wherein the data line intersects the first gate wiring and the second gate wiring; and a short circuit protection area formed between the first gate wiring and the second gate wiring, wherein the short circuit protection area is formed between the driving voltage line and the data line, and wherein an interval between the first gate wiring and the second gate wiring in the short circuit protection area is larger than an interval between the first gate wiring and the second gate wiring outside of the short circuit protection area.
地址 Yongin-si KR