发明名称 |
Method of manufacturing a multi-sided-channel finfet transistor |
摘要 |
<p>An at least penta-sided-channel type of FinFET transistor may include: a base; a semiconductor body formed on the base, the body being arranged in a long dimension to have source/drain regions sandwiching a channel region, at least the channel, in cross-section transverse to the long dimension, having at least five planar surfaces above the base; a gate insulator on the channel region of the body; and a gate electrode formed on the gate insulator.</p> |
申请公布号 |
EP1555688(A2) |
申请公布日期 |
2005.07.20 |
申请号 |
EP20050000303 |
申请日期 |
2005.01.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
RHEE, HWA-SUNG;UENO, TETSUJI;YOO, JAE-YOON;LEE, HO;LEE, SEUNG-HWAN;KIM, HYUN-SUK;PARK, MOON-HAN |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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