| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of stably applying a reference potential to a sense amplifier when stored data is read. Ž<P>SOLUTION: The semiconductor memory device includes a memory mat including memory cells for storing data, a sense amplifier 203 for detecting data stored in a memory cell 212, and a potential generation part 25 connected to the sense amplifier 203 by a bit line pair. When the data stored in the memory cell 212 is detected, the bit line pair connected to the sense amplifier 203 is precharged to a predetermined potential, and then one of the bit lines of the bit line pair is connected to the memory cell 212, and a potential of the other bit line is set to a reference potential by connection of the bit line to the potential generation part 25 to move charges. The potential generation part 25 obtains a desired reference potential by storing predetermined charges. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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