SEMICONDUCTOR DEVICE TO PREVENT REACTION BETWEEN SECOND INSULATION LAYER AND GATE ELECTRODE

摘要

PURPOSE: A semiconductor device is provided to prevent a reaction between the second insulation layer and a gate electrode by installing a metal nitride layer between the second insulation layer and the gate electrode. CONSTITUTION: A semiconductor device includes a gate insulation layer(6) formed on a silicon substrate(1) and a gate electrode(7) formed on the gate insulation layer. The gate insulation layer includes the first insulation layer(9), the second insulation layer(10) and a metal nitride layer(11). The second insulation layer is formed on the first insulation layer. The metal nitride layer is formed on the second insulation layer. The equivalent oxide thickness of a gate insulation layer is from 1.2 nanometer to 1.5 nanometer. The thickness of the first insulation layer is from 0.5 nanometer to 1.0 nanometer. The thickness of the metal nitride layer is from 0.3 nanometer to 1.0 nanometer.