METHOD FOR PRODUCING A NITRIDE SEMICONDUCTOR COMPONENT, AND A NITRIDE SEMICONDUCTOR COMPONENT

摘要

The invention relates to a method for producing a nitride semiconductor component (100), comprising the steps of: - providing a growth substrate (1) having a growth surface (10) formed from a planar area (11) with a plurality of three-dimensionally shaped surface structures (12) on said planar area (11), - growing a nitride-based semiconductor layer sequence (30) on the growth surface (10), growth beginning selectively on a growth area (13) of said growth substrate, and the growth area (13) being less than 45% of the growth surface (10). The invention also relates to a nitride semiconductor component (100) which can be produced according to said method.