| 摘要 |
PROBLEM TO BE SOLVED: To realize the processing of 1.0μm or less by avoiding charging stably regardless the state or the kinds of a sample, and detecting the secondary electron image of the sample in real time with high resolution so as to realize the pattern observation of the sample, the positioning of a focused charged particle beam, and the like with high precision. SOLUTION: In a processing method by a focused charged particle beam 3 and its device, the focused charged particle beam 3 is controlled so as to irradiate a required place of a sample 7 surface to process, and the focused charged particle beam 3 is applied onto the area of its surface so as to detect a secondary electron image based on the secondary electrons generated from the surface of the sample. A position ion beam 22 is applied onto the surface of the sample 7 containing the focused charged particle beam 3-irradiation area so as to induce an induced conductive layer 29 joining to an electron releasing means 30 so that charged charge on the surface of the sample 7 is released from the electron releasing means via the induced conductive layer 29.
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