VERTICAL LIGHT EMITTING DIODE, METHOD FOR MANUFACTURING THE SAME AND LIGHT EMITTING DIODE HAVING THE SAME

摘要

The light emitting diode including the vertical type light emitting diode and the manufacturing method thereof are provided to form the pattern consisting of the transparency conductivity material and to reduce the ohmic contact resistance of the n-type semiconductor layer. The buffer layer is formed on the substrate. The pattern(130) is formed on the buffer layer. The n-type semiconductor layer(140), and the active layer(150) and p-type semiconductor layer(160) are successively formed on the buffer layer in which pattern is formed. The multiple quantum well of the well layer and barrier layer is formed. The buffer layer is exposed by the laser lift-off process for removing the substrate. The exposed buffer layer is etched and the concavo-convex region is formed on the n-type semiconductor layer. The N electrode(180) is formed on the concavo-convex region and the pattern. The pattern is formed in the form of the stripe or the mesh. The transparency conductivity material is the ITO (Indium Tin Oxide) or the IZO (Indium Zinc Oxide).