FLASH MEMORY DEVICE FOR CONTROLLING VARIABLE PROGRAM VOLTAGES AND PROGRAM METHOD THEREOF

摘要

A flash memory device and a programming method thereof are provided to improve reliability of cell operation by increasing the interval between the threshold voltage distributions of the programmed cell. A program control logic(310) produces a loop clock signal and an ISPP(Increment Step Pulse Programming) information signal in response to the program pass/fail information. An ISPP control logic unit(320) generates a default level enable signal and an additional level enable signal in response to the loop clock signal and the ISPP information signal. A program voltage regulator(330) variably increases a program voltage in response to a default level enable signal and an additional level enable signal. The program voltage regulator generates a pumping clock signal according to the comparison result of the distributed program voltage and the reference voltage. A charge pump unit(340) generates the program voltage in response to the pumping clock signal.