METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT AND MANUFACTURING SYSTEM FOR THE SAME

摘要

Provided are a method of manufacturing a magnetoresistive element and a manufacturing system which are capable of manufacturing a magnetoresistive element achieving further downscaling, i.e., further increase in the degree of integration of the magnetoresistive element while having high magnetic properties. The method includes: preparing a stacked film including one of the two magnetic layers, a layer to form the tunnel barrier layer, and the other of the two magnetic layers, on a substrate; forming multiple separated stacked films on the substrate by separating the stacked film into the multiple stacked films by etching; irradiating side portions of the multiple separated stacked films with ion beams in a pressure-reducible process chamber; and after the irradiation with the ion beams, forming oxide layers or nitride layers on surfaces of the multiple stacked films by introducing an oxidizing gas or a nitriding gas into the process chamber.

主权项

1. A method of manufacturing a magnetoresistive element in which a tunnel barrier layer is provided between two magnetic layers, the method comprising the steps of:
preparing a stacked film on a substrate, the stacked film including one of the two magnetic layers, a layer to form the tunnel barrier layer, and the other of the two magnetic layers; forming a plurality of separated stacked films on the substrate by separating the stacked film into the plurality of stacked films by etching; irradiating side portions of the plurality of separated stacked films with ion beams in a pressure-reducible process chamber; and after the irradiation with the ion beams, forming oxide layers or nitride layers on surfaces of the plurality of stacked films by introducing an oxidizing gas or a nitriding gas into the process chamber.