Magnetic random access memory journal for multi-level cell flash memory

摘要

A flash memory system comprises a logic block interface operable to receive a write command from a host computer, the write command specifying data and a write destination address in a flash memory device, the flash memory device operable to store data at a complementary address corresponding to the specified write destination address. The system further comprises a journal communicatively coupled to the flash memory device and the logic block interface operable to temporarily store data from the complementary address of the flash memory device, and to provide the stored data in the journal to be restored to the flash memory device at the complementary address in the event of an error occurring while executing the write command.

主权项

1. A flash memory system comprising:
a logic block interface operable to receive a write command from a host computer, the write command specifying data and a write destination address in a flash memory device; the flash memory device operable to store data at a complementary address corresponding to the specified write destination address; and a journal communicatively coupled to the flash memory device and the logic block interface operable to temporarily store data from the complementary address of the flash memory device, and to provide the stored data in the journal to be restored to the flash memory device at the complementary address in the event of an error occurring while executing the write command.