Methods for characterizing shallow semiconductor junctions

摘要

The disclosed technology generally relates to methods of characterizing semiconductor materials, and more particularly to methods of characterizing shallow semiconductor junctions. In one aspect, the method of characterizing shallow semiconductor junctions comprises providing a substrate comprising a shallow junction formed at a first main surface, where the shallow junction is formed substantially parallel to the first main surface. The method additionally comprises providing a dielectric layer on the first main surface. The method additionally comprises iterating, at least twice, a combination of processes including providing a respective charge on a predetermined area of the dielectric layer via a charge applicator, and measuring a corresponding junction photovoltage for the predetermined area. The method further comprises deriving at least one of an average hole/electron mobility or a dose of active dopants in the substrate corresponding to the predetermined area, based on the respective charges and the corresponding junction photo voltages.

主权项

1. A method of characterizing shallow semiconductor PN junctions, the method comprising:
providing a substrate comprising a shallow PN junction formed at a first main surface, the shallow PN junction comprising a p-type region and an n-type region and being formed substantially parallel to the first main surface; providing a dielectric layer contacting the first main surface thereby forming a dielectric/semiconductor interface with one of the p-type region or the n-type region, wherein the shallow PN junction has a depth less than 100 nm from the dielectric/semiconductor interface; iterating, at least twice, a combination of processes including:
providing a respective charge on a predetermined area of the dielectric layer via a charge applicator, andmeasuring a corresponding junction photovoltage for the predetermined area; and deriving at least one of an average hole/electron mobility or a dose of active dopants in the substrate corresponding to the predetermined area, based on the respective charges and the corresponding junction photovoltages.