发明名称 |
Method of manufacturing a flash EEPROM cell using the select gates as a mask |
摘要 |
A method of manufacturing a flash EEPROM cell with a split-gate structure which can improve the electrical characteristics of the cell by forming a source region through an ion implantation method using a select gate as a mask to prevent the reduction in the electrical characteristics of a gate oxide layer is disclosed.
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申请公布号 |
US5607871(A) |
申请公布日期 |
1997.03.04 |
申请号 |
US19960596743 |
申请日期 |
1996.02.05 |
申请人 |
HYUNDAI ELECTRONIC INDUSTRIES CO., LTD. |
发明人 |
HAN, SUNG O. |
分类号 |
H01L21/8247;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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