| 摘要 |
PROBLEM TO BE SOLVED: To prevent side etching of a substratum metal layer. SOLUTION: After an oxide film 12, an Al electrode pad 13 and a surface protective film 14 are formed on a semiconductor substrate 11, a through hole 15 is formed on the Al electrode pad 13. Substratum metal layers Ti/W 16a and Pd 16b are deposited in order on the whole surface. A photosensitive resin film is stuck on the whole surface, and a pattern 17 for forming a bump electrode is formed by exposure and development. The substratum metal layers 16a, 16b are used as common electrodes, and a bump electrode 18 is formed by an electroplating method. By eliminating the photosensitive resin film around the bump electrode 18, a gap is formed around the bump electrode 18. The substratum metal layers 16a, 16b are used as common electrodes, a substratum metal protective layer is formed by an electroplating method. A pattern is eliminated by using etching solvent for the photosensitive resin film, and the substratum metal layers 16a, 16b are etched and eliminated by using the substratum metal protective layer as the mask. |
